dim 1000ecm33 - ts000 igbt chopper module replaces ds6091 - 2 ds6091 - 3 september 2014 (ln 31962 ) caution: this device is sensitive to electrostatic discharge. users should follow esd handling procedures 1 / 8 www.dynexsemi.com features ? 10s short circuit withstand ? high thermal cycling capability ? high current density enhanced dmos spt ? isolated alsic base with aln substrates applications ? high reliability inverters ? motor controllers ? traction drives ? choppers the powerline range of high power modules includes half bridge, chopper, dual, single and bi - directional switch configurations covering voltages from 12 00v to 65 00v and currents up to 2400a. the dim 10 00ec m33 - t s 000 is a 33 00v, soft punch through n - channel enhancement mode, insulated gate bipolar transistor (igbt) chopper module . the igbt has a wide reverse bias safe operating area (rbsoa) plus 10s short circuit withstand. this device is optimised for traction drives and other applications requiring high thermal cycling capability. the module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise c ircuit layouts and utilise grounded heat sinks for safety . ordering information order as: dim 10 00ec m33 - t s 000 note: when ordering, please use the complete part number key parameters v ces 33 00 v v ce(sat) * (typ) 2.2 v i c (max) 10 00 a i c(pk) (max) 20 0 0 a * measured at the auxiliary terminals fig. 1 circuit configuration outline type code: e (see fig. 11 for further information) fig. 2 package 5(a) 4(k) 2(g) 1(e) 3(c) 8(e) 6(e) 7(c) 9(c)
dim 1000ecm33 - ts000 2 /8 caution: this device is sensitive to electrostatic discharge. users should follow esd handling procedures. www.dynexsemi.com absolute maximum ratings stresses above those listed under absolute maximum ratings may cause permanent damage to the device. in extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. appropriate safety precautions should always be followed. exposure to absolute maximum ratings may affect device reliability. t case = 25c unless stated otherwise symbol parameter test conditions max. units v ces collector - emitter voltage v ge = 0v 3 300 v v ges gate - emitter voltage 20 v i c continuous collector current t case = 110 c 10 00 a i c(pk) peak collector current 1ms, t case = 140 c 20 00 a p max max. transistor power dissipation t case = 25c, t j = 150c 10.4 k w i 2 t diode i 2 t value (igbt arm) v r = 0, t p = 10ms, t j = 125oc 320 ka 2 s diode i 2 t value (diode arm) 320 ka 2 s v isol isolation voltage C per module commoned terminals to base plate. ac rms, 1 min, 50hz 6000 v q pd partial discharge C per module iec1287, v 1 = 35 00v, v 2 = 26 00v, 50hz rms 10 pc thermal and mechanical ratings internal insulation material: aln baseplate material: alsic creepage distance: 31 mm clearance: 20 mm cti (comparative tracking index): >600 symbol parameter test conditions min typ. max units r th(j - c) thermal resistance C C th(j - c) thermal resistance C C th(j - c) thermal resistance C C th(c - h) thermal resistance C j junction temperature transistor - - 150 c diode - - 150 c t stg storage temperature range - - 40 - 125 c screw torque mounting C C C
dim 1000ecm33 - ts000 caution: this device is sensitive to electrostatic discharge. users should follow esd handling procedures 3 / 8 www.dynexsemi.com electrical characteristics t case = 25 c unless stated otherwise. symbol parameter test conditions min typ max units i ces collector cut - off current v ge = 0v, v ce = v ces 4 ma v ge = 0v, v ce = v ces , t case = 125c 60 ma v ge = 0v, v ce = v ces , t case = 150c 100 ma i ges gate leakage current v ge = 20 v, v ce = 0v 1 a v ge(th) gate threshold voltage i c = 8 0ma, v ge = v ce 5.7 v v ce(sat) ? collector - emitter saturation voltage v ge = 15v, i c = 1000a 2.2 v v ge = 15v, i c = 1000a, t j = 125c 2.8 v v ge = 15v, i c = 1000a, t j = 150c 3.0 v i f diode forward current dc 10 00 a i fm diode maximum forward current t p = 1ms 20 00 a v f ? diode forward voltage (igbt & diode arm) i f = 1000a 2.4 v i f = 1000a, t j = 125c 2.5 v i f = 1000a, t j = 150c 2.4 v c ies input capacitance v ce = 25v, v ge = 0v, f = 1mhz 170 nf q g gate charge 15v including external c ge 17 c c res reverse transfer capacitance v ce = 25v, v ge = 0v, f = 1mhz 4 nf l m module inductance igbt 15 nh diode 25 r int internal resistance igbt 135 diode 270 ? sc data short circuit current, i sc t j = 150 c, v cc = 2500 v t p 10s, v ge 15v v ce (max) = v ces C l * x di/dt iec 60747 - 9 3700 a note: ? me asured at the auxiliary terminals * l is the circuit inductance + l m
dim 1000ecm33 - ts000 4 /8 caution: this device is sensitive to electrostatic discharge. users should follow esd handling procedures. www.dynexsemi.com electrical characteristics t case = 25c unless stated otherwise symbol parameter test conditions min typ. max units t d(off) turn - off delay time i c = 1000a v ge = 15v v ce = 1800v r g(on) = 2.7 ? r g(off) = 2.2 ? c ge = 220nf l s ~ 100nh 2700 ns t f fall time 520 ns e off turn - off energy loss 1950 mj t d(on) turn - on delay time 1000 ns t r rise time 400 ns e on turn - on energy loss 1300 mj q rr diode reverse recovery charge i f = 1000a v ce = 1800v di f /dt = 2700a/s 570 c i rr diode reverse recovery current 615 a e rec diode reverse recovery energy 670 mj t case = 125c unless stated otherwise symbol parameter test conditions min typ. max units t d(off) turn - off delay time i c = 1000a v ge = 15v v ce = 1800v r g(on) = 2.7 ? r g(off) = 2.2 ? c ge = 220nf l s ~ 100nh 2750 ns t f fall time 570 ns e off turn - off energy loss 2200 mj t d(on) turn - on delay time 1020 ns t r rise time 420 ns e on turn - on energy loss 1700 mj q rr diode reverse recovery charge i f = 1000a v ce = 1800v di f /dt = 2700a/s 935 c i rr diode reverse recovery current 775 a e rec diode reverse recovery energy 1150 mj t case = 150c unless stated otherwise symbol parameter test conditions min typ. max units t d(off) turn - off delay time i c = 1000a v ge = 15v v ce = 1800v r g(on) = 2.7 ? g(off) = 2.2 ? ge = 220nf l s ~ 100nh 2800 ns t f fall time 550 ns e off turn - off energy loss 2300 mj t d(on) turn - on delay time 1030 ns t r rise time 430 ns e on turn - on energy loss 1850 mj q rr diode reverse recovery charge i f = 1000a v ce = 1800v di f /dt = 2700a/s c rr diode reverse recovery current 800 a e rec diode reverse recovery energy 1300 mj
dim 1000ecm33 - ts000 caution: this device is sensitive to electrostatic discharge. users should follow esd handling procedures 5 / 8 www.dynexsemi.com fig. 3 typical output characteristics fig. 4 typical output characteristics fig. 5 typical switching energy vs collector current fig. 6 typical switching energy vs gate resistance
dim 1000ecm33 - ts000 6 /8 caution: this device is sensitive to electrostatic discharge. users should follow esd handling procedures. www.dynexsemi.com fig. 7 diode typical forward characteristics fig. 8 reverse bias safe operating area fig. 9 diode reverse bias safe operating area fig. 10 transient thermal impedance
dim 1000ecm33 - ts000 caution: this device is sensitive to electrostatic discharge. users should follow esd handling procedures 7 / 8 www.dynexsemi.com package details for further package information, please visit our website or contact customer services. all dimensions in mm, unless stated otherwise. do not scale. nominal weight: 14 00g module outline type code: e fig. 11 module outline drawing screwing depth max. 16 screwing depth max. 8 6 x m8 3 x m4 7 8 x 7 57 0.1 171 0.15 190 0.5 20 0.1 40 0.2 124 0.1 140 0.5 79.4 0.2 41.25 0.2 20.25 0.2 61.5 0.3 61.5 0.3 13 0.2 5 0.2 38 0.5 5.2 0.2 40 0.2 28 0.5 ?
dim 1000ecm33 - ts000 8 /8 caution: this device is sensitive to electrostatic discharge. users should follow esd handling procedures. www.dynexsemi.com important information: this publication is provided for information only and not for resale. the products and information in this publication are intended for use by appropriately trained technical personnel. due to the diversity of product applications, the information contained herein is provided as a general guide only and does n ot constitute any guarantee of suitability for use in a specific application . the user must evaluate the suitability of the produc t and the completeness of the product data for the application. the user is responsible for product selection and ensuring all safety and any warning requirements are met. should additional product information be needed please contact customer service. although we have endeavoured to carefully compile the information in this publication it may contain inaccuracies or typographical errors. the information is provided without any warranty or guarantee of any kind. this publication is an uncontrolled docu ment and is subject to change without notice. when referring to it please ensure that it is the most up to date version and has not been superseded. the products are not intended for use in applications where a failure or malfunction may cause loss of li fe, injury or damage to property. the user must ensure that appropriate safety precautions are taken to prevent or mitigate the consequences of a product failure or malfunction. the products must not be touched when operating because there is a danger of electrocution or severe burning. always use protective safety equipment such as appropriate shields for the product and wear safety glasses. even when disconnected any electric charge remaining in the product must be discharged and allowed to cool befor e safe handling using protective gloves. extended exposure to conditions outside the product ratings may affect reliability leading to premature product failure. use outside the product ratings is likely to cause permanent damage to the product. in extr eme conditions, as with all semiconductors, this may include potentially hazardous rupture, a large current to flow or high voltage arcing, resulting in fire or explosion. appropriate application design and safety precautions should always be followed to protect persons and property. product status & product ordering: we annotate datasheets in the top right hand corner of the front page, to indicate product status if it is not yet fully appr oved for production. the annotations are as follows: - target in formation: this is the most tentative form of information and represents a very preliminary specification. no actual design work on the product has been started. preliminary information: the product design is complete and final characterisation for vo lume production is in progress. the datasheet represents the product as it is now understood but details may change. no annotation: the product has been approved for production and unless otherwise notified by dynex any product ordered will be suppl ied to the current version of the data sheet prevailing at the time of our order acknowledgement. all products and materials are sold and services provided subject to dynexs conditions of sale, which are available on request. any brand names and prod uct names used in this publication are trademarks, registered trademarks or trade names of their respective owners. headquarters operations customer service dynex semiconductor ltd doddington road, lincoln, lincolnshire, ln6 3lf, united kingdom dynex semiconductor ltd doddington road, lincoln, lincolnshire, ln6 3lf, united kingdom fax: +44(0)1522 500550 fax: +44(0)1522 500020 tel: +44(0)1522 500500 tel: +44(0)1522 502753 / 502901 web: http://www.dynexsemi.com email: power_solutions@dynexsemi.com ? dynex semiconductor ltd. 201 3 technical documentation C not for resale.
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